DRV10983-Q1 Automotive, 12V, 24V Three-Phase, Sensorless BLDC Motor Driver Evaluation Module

The DRV10983Q1EVM evaluation module (EVM) serves as a user-friendly evaluation kit to demonstrate TI's brushless motor driver, DRV10983-Q1. The EVM is a high-performance, power-efficient, cost-effective platform that speeds development for quicker time to market. DRV10983Q1EVM supports sensorless Brushless DC motors for a wide range of automative applications.

UCC27714 高速、4A、600V 高侧/低侧栅极驱动器

UCC27714是一款600V高侧/低侧栅极驱动器,具有4A拉/灌电流能力,专用于驱动功率金属氧化物半导体场效应晶体管(MOSFET)或绝缘栅双极晶体管(IGBT)。

UCC27201A-Q1 汽车类 120V 升压 3A 峰值电流的高频高侧/低侧驱动器

UCC27201A-Q1高频N沟道MOSFET驱动器由120V自举二极管和高侧/低侧驱动器组成,其中高侧/低侧驱动器配有独立输入,可最大限度提高控制灵活性。

UCC27511 4A/8A 单通道高速低侧闸极驱动器

UCC27511和 UCC27512单通道、高速、低侧栅极驱动器器件能够有效地驱动金属氧化物半导体场效应晶体管(MOSFET)和绝缘栅双极型晶体管(IGBT)电源开关。

UCC21520 4A/6A、5.7 kVrms双通道隔离式栅极驱动器

The UCC21520 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

3A 高电压高侧和低侧闸极驱动器

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. 

高电压 1A 峰值半桥接闸极驱动器

LM5109B 器件是一款经济高效的高电压栅极驱动器,专为驱动采用同步降压或半桥配置的高侧和低侧 N 沟道 MOSFET 而设计。

8 引脚高频 4A 吸入电流同步 MOSFET 驱动器

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.

用于汽车 LED 照明的 2A、64V 升压控制器

TPS92515 系列器件是集成了低电阻 N 沟道金属氧化物半导体场效应晶体管 (MOSFET) 的紧凑型单片开关稳压器。该系列器件适用于 注重 高效率、高带宽、PWM 和/或模拟调光以及小尺寸的高亮度 LED 照明应用。